NTE346 Silicon NPN Transistor RF Power Transistor
Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver or pre-driver stages, in VHF and UHF equipment. Features: D Current-Gain-Bandwidth Product-fT = 500MHz (Min) @ IC = 50mAdc D Power Gain-Gpe = 10dB (Min) @ VCE =12Vdc D 1 Watt Minimum Power Output @ f = 175MHz D Multiple-Emitter Construction for Excellent High-Frequency Performance Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V Collector Current-Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Base Current-Continuous. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.71mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5Wa Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 5mA, IB = 0 VCER(sus) IC = 5mA, RBE = 10 ICEO ICEV Emitter Cutoff Current IEBO VCE = 12V, IB = 0 VCE = 40V, VBE = -1.5V VCE = 12V, VBE = -1.5V, TC = +150C VEB = 2V, IC = 0 20 40 - - - - - - - - - - - - 0.02 0.1 5.0 0.1 V V mA mA mA mA Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified)
Parameter ON Characteristics DC Current Gain hFE VCE(sat) fT Cob Pin Gpe IC = 100mA, VCE = 5V IC = 360mA, VCE = 5V Collector-Emitter Saturation Voltage Dynamic Characteristics Current-Gain Bandwidth Product Output Capacitance Functional Test Power Input Collector Efficiency Common-Emitter Amplifier Power Gain Pout = 1W, ZS = 50, VCC = 12V, f = 175MHz Pin = 100mW, ZS = 50, VCC = 12V, f = 175MHz - 50 10 - - - 100 - - W % dB IC = 50mA, VCE = 15V, f = 1MHz VCB = 12V, IE = 0, f = 1MHz 500 - - - - 4 MHz pF IC = 100mA, IB = 20mA 10 5 - - - - 200 - 0.5 V Symbol Test Conditions Min Typ Max Unit
.370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max
.500 (12.7) Min
.018 (0.45) Dia B E C/Case
45
.031 (.793)
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